在TFT小型化趋势下，需要进一步提高氢化非晶硅薄膜晶体管的TFT特性，尤其是开态电流特性。本文结合生产实际，阐述了工艺上改善氢化非晶硅开态电流特性的方法，包括提高单位面积栅绝缘层电容和改善载流子迁移率。实验结果表明，降低高速沉积栅绝缘层的气压和厚度，能有效提高单位面积栅极绝缘层电容。增加低速沉积栅绝缘层的Si/N比及优化氢等离子体处理工艺，可以有效改善载流子迁移率。



In the trend of TFT miniaturization, the TFT characteristics of a-Si:H thin film transistor need be improved, especially for Ion characteristics. Considering the actual production, the author explained the way to improve a-Si:H TFT characteristics in the production process. In order to improve Ion, the gate insulator capacitance per unit area and the carrier mobility should be increased. According to experimental results, when the pressure and thickness of gate insulator with high deposition rate reduced, the gate insulator capacitance per unit area can be improved effectively. On the other hand, when the Si/N ratio of gate insulator with low deposition rate increased, and the H2 Plasma process optimized, the carrier mobility can be improved effectively.

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